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Topic Name: Development of Thin-film Electroluminescent Device Using Inorganic Oxides
Category: Nanocharacterization
Research persons: Hiroshi Takashima,Senior Research Scientist,Nanoelectronics Research Institute
Location: Tokyo, Japan
Details
The thin-film EL devices use perovskite oxides, typified by barium titanate
(BaTiO3), which has long been used as capacitor material for
electronic circuits. With an emission starting voltage of ≈10 V AC, the power
source can be downsized due to low voltage operation of the device. A wide
viewing angle is obtained by means of plane emission through the entire surface
of the transparent electrode. There are no resource constraints due to the
global abundance of required materials for the emitting and insulator layers. As
all layers including the emitting layer are made of chemically stable inorganic
materials, characteristic degradation due to oxidation or heat is unlikely to
occur and thus a sealing process can be simplified. Hence, energy will be saved
in a manufacturing process. Such applications as lighting, optical sources and
displays will become feasible if higher brightness and polychromatic radiation
are achieved in the years to come.
Points :
- Simplified manufacturing process due to the use of chemically stable
perovskite oxide
- Plane emission through a transparent electrode assures a wide viewing
angle
- Smaller power source increases the potential for future applications such
as displays
Social Background for Research:
Fluorescent lamps, today’s mainstream lighting equipment, pose an
environmental load in that they use mercury. Alternative lighting that conserves
energy is presently being developed, and the candidates are inorganic EL,
organic EL and white LEDs. Organic EL devices entail several problems such as
the tradeoff between brightness and life; degradation of characteristics by air
exposure; cumbersome sealing process; and material cost. White LEDs are a
promising candidate having achieved high brightness, but they present such
problems as a limited viewing angle because they are a point light source,
limitation of resources such as gallium, and high cost. On the other hand,
inorganic EL devices using inorganic perovskite oxides have considerable merit
because they have excellent chemical stability and heat resistance and are
hardly degraded, and there is no limitation on resources, so there is strong
demand for their development.
History of Research:
The Nanoelectoronics Research Institute of AIST, has been studying new
electronic phenomena and materials, and devices utilizing them, aiming the
creation of innovative devices. Through these efforts, we discovered that many
inorganic perovskite oxides efficiently emit fluorescence when excited with
ultraviolet light. As we succeeded in fabricating a thin-film light emitting
layer, we aimed at the development of a stable inorganic EL device having the
emitting layer(s) stacked with insulator layers.
Details of Research:
In the new inorganic EL device, as shown in Fig. 1, an
insulator-/emitting-/insulator-layer stack was fabricated using the pulse laser
deposition (PLD) method. For film deposition, an ArF excimer laser (wavelength
193 mm) was used at a substrate temperature of 700°C and in an atmosphere of 10
Pa oxygen. After annealing in the air, a transparent electrode was formed by PLD
to perfect the EL device.
Strontium titanate with 1% niobium added (1%Nb-SrTiO3) is used as
the substrate electrode; calcium strontium titanate ((Ca0.6Sr0.4)TiO3),
an inorganic perovskite oxide, is used as the light emitting layer containing a
trace amount of praseodymium (Pr) added to the A sites as the emitting center;
and strontium titanate (SrTiO3), another inorganic perovskite oxide,
is used as the insulator layers. The thin films are deposited continuously to
make a thin-film EL device with a double insulator layer structure. The top
transparent electrode is made of ITO or SnO2 film. Oriented growth of
all layers is confirmed by X-ray diffraction measurement.
The emission spectrum of the inorganic EL device when AC voltage of 14 V, 1
kHz is applied. The emission is red, peaking at a wavelength of 612 nm. The
photo shows that red light is uniformly emitted from the entire surface of the
transparent electrode. This emission is very likely due to the energy transition
from 1D2 to 3H4 of the Pr3+
ion. The emission starting voltage for this inorganic EL device is about 10 V,
which is more than one order of magnitude smaller than those of existing
inorganic EL devices. In addition, a thin-film EL device with double emitting
layers is fabricated with a double insulator layer structure, and strong red
emission is obtained with a voltage of 24 V (Fig. 2 (right)), which is
approximately twice as large as that for the single-layer EL device, as
discussed.
Future Schedule:
To achieve practical use of the newly developed inorganic EL device with
perovskite oxides, such as in the area of lighting, light sources and displays,
we must improve the brightness, establish a technology for obtaining large-area
devices at low cost, and realize multiple colors. We intend to pursue such
technical targets as optimized emission characteristics and improved brightness,
ways to obtain large-area devices at low cost and upgrade functionality, and the
realization of RGB primary colors through the development of EL devices using
other materials.
| Tags: |
thin-film EL - perovskite oxides - barium titanate - Plane emission - pulse laser deposition - ArF excimer laser - - |
| Research Documents: |
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